J. Ackaert, T. Vermeulen, A. Lowe, S. Boonen, T. Yao, J. Prasad, M. Thomason, J. van Houdt, R. Degraeve, L. Haspeslagh, P. Hendrickx
{"title":"Characterization of tunnel oxides for non-volatile memory (NVM) applications","authors":"J. Ackaert, T. Vermeulen, A. Lowe, S. Boonen, T. Yao, J. Prasad, M. Thomason, J. van Houdt, R. Degraeve, L. Haspeslagh, P. Hendrickx","doi":"10.1109/ISDRS.2003.1271982","DOIUrl":null,"url":null,"abstract":"The purpose of this paper is to characterize, to compare different types of tunnel oxides and to determine the impact on the MB (Moving Bit measurement) issues. The measurements and comparison carried out for the following tunnel oxide thickness in the range of 8 to 10 nm is used. They are: (1) Dry oxidation at 900 C which gives acceptable oxide quality in the thickness range of 100 /spl Aring/ (2) 5% O/sub 2/ diluted oxidation at 900 C, (3) 5% O/sub 2/ diluted oxidation at 960 C and (4) Wet oxidation at 750 C which gives superior results even for a minimal oxide thickness of 88.9 /spl Aring/.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1271982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The purpose of this paper is to characterize, to compare different types of tunnel oxides and to determine the impact on the MB (Moving Bit measurement) issues. The measurements and comparison carried out for the following tunnel oxide thickness in the range of 8 to 10 nm is used. They are: (1) Dry oxidation at 900 C which gives acceptable oxide quality in the thickness range of 100 /spl Aring/ (2) 5% O/sub 2/ diluted oxidation at 900 C, (3) 5% O/sub 2/ diluted oxidation at 960 C and (4) Wet oxidation at 750 C which gives superior results even for a minimal oxide thickness of 88.9 /spl Aring/.
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