ESD sensitivity of GMR heads at variable pulse length

D. Guarisco, M. Li
{"title":"ESD sensitivity of GMR heads at variable pulse length","authors":"D. Guarisco, M. Li","doi":"10.1109/EOSESD.2000.890092","DOIUrl":null,"url":null,"abstract":"9 Gb/in/sup 2/ GMR heads were subjected to electrical overstress using square pulses of variable duration. The pulse length was varied between 4 ns and 80 ms. For each pulse length, the magnetic and physical failure thresholds were measured via a quasi-static test. It is found that for long pulses (/spl gsim/1 /spl mu/s) the GMR sensors fail at constant power, whereas at very short times (<100 ns), the system starts to gradually transition to an adiabatic regime where failure occurs at constant energy.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

9 Gb/in/sup 2/ GMR heads were subjected to electrical overstress using square pulses of variable duration. The pulse length was varied between 4 ns and 80 ms. For each pulse length, the magnetic and physical failure thresholds were measured via a quasi-static test. It is found that for long pulses (/spl gsim/1 /spl mu/s) the GMR sensors fail at constant power, whereas at very short times (<100 ns), the system starts to gradually transition to an adiabatic regime where failure occurs at constant energy.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
变脉冲长度下GMR磁头的ESD灵敏度
9 Gb/in/sup 2/ GMR磁头使用可变持续时间的方脉冲进行电超应力。脉冲长度在4 ns到80 ms之间变化。对于每个脉冲长度,通过准静态测试测量磁性和物理失效阈值。研究发现,对于长脉冲(/spl gsim/1 /spl mu/s), GMR传感器在恒定功率下失效,而在非常短的时间内(<100 ns),系统开始逐渐过渡到绝热状态,在恒定能量下失效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
ESD damage thresholds: history and prognosis [magnetic heads] Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors A study of static-dissipative tweezers for handling giant magneto-resistive recording heads A study of the mechanisms for ESD damage to reticles Floating gate EEPROM as EOS indicators during wafer-level GMR processing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1