Low temperature Cu/In bonding for 3D integration

I. Panchenko, Steffen Bickel, Jörg Meyer, Maik Müller, J. Wolf
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引用次数: 1

Abstract

This study represents the results of Cu/In bonding based on solid-liquid interdiffusion (SLID) principle for 3D integration. Fine-pitch interconnects were successfully fabricated at the bonding temperature of 170 °C. The final microstructure of the interconnects consists of Cu and Cu/In intermetallic compounds (IMCs) and it is described in detail. The influence of the isothermal storage on the microstructure development is investigated as well.
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低温Cu/In键合用于3D集成
本研究代表了基于固液互扩散(slip)原理的Cu/In键合三维集成的结果。在170℃的键合温度下成功制备了细间距互连。本文详细描述了铜和铜/铟金属间化合物(IMCs)的最终微观结构。研究了等温贮藏对合金微观组织发育的影响。
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