Global statistical methodology for the analysis of equipment parameter effects on TSV formation

Abstract

We describe a global methodology for the extraction and the quantification of the effects of the most relevant equipment parameters involved in TSV processing. With a specific focus on the DRIE step of the TSVs' fabrication, we propose a dedicated simulation flow describing the distribution of the species over the wafer inside the etching chamber, the physical plasma simulation of polymer deposition and etching loops, and the electrical performance simulation of the resulting structures. Statistical techniques such as Pareto Graphs and Design of Experiments are used for the extraction of the most relevant equipment parameters on the electrical and metal stress responses.