{"title":"Silicon Isotope Technology for Quantum Computing","authors":"S. Miyamoto, K. Itoh","doi":"10.1109/IEDM.2018.8614609","DOIUrl":null,"url":null,"abstract":"We present isotopically engineered Si-28/SiGe heterostructures for development of silicon-based quantum computers using a standard silicon CMOS integration technology. Our Si-28 quantum-wells are well-strained and demonstrate high electron mobility and large valley-splitting. These properties provide promising platforms for realization of highly integrated spin qubits working together with silicon CMOS circuits.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614609","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We present isotopically engineered Si-28/SiGe heterostructures for development of silicon-based quantum computers using a standard silicon CMOS integration technology. Our Si-28 quantum-wells are well-strained and demonstrate high electron mobility and large valley-splitting. These properties provide promising platforms for realization of highly integrated spin qubits working together with silicon CMOS circuits.