Novel materials for next generation photonic devices

M. Lipson
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Abstract

Ultrafast optoelectronics devices, critical for future telecommunication and data ultra high speed communications and data communications, have been limited in speed due to nature of the materials forming the devices. Only very few materials can be used today as substrates for high speed optoelectronics limiting the applicability of these devices and preventing their integration with other emerging platforms such as RF photonics and silicon photonics. I will discuss novel materials for integrated optics including SiC, SiN and 2D materials. In particular graphene offers the possibility to break the limitation of traditional photonic materials. Graphene has been shown theoretically to have very high electro-optic coefficient with ultra high speed. We show the first demonstration of graphene-based ultra high speed device (30GHz) consisting of a graphene sheet integrated on a passive non-electro-optically active substrate.
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新一代光子器件的新材料
超快光电子器件是未来电信和数据超高速通信和数据通信的关键,由于形成器件的材料的性质,其速度受到限制。目前,只有很少的材料可以用作高速光电子器件的衬底,这限制了这些器件的适用性,并阻止了它们与其他新兴平台(如射频光子学和硅光子学)的集成。我将讨论集成光学的新材料,包括SiC, SiN和2D材料。特别是石墨烯提供了打破传统光子材料限制的可能性。从理论上讲,石墨烯在超高速下具有很高的电光系数。我们展示了基于石墨烯的超高速器件(30GHz)的首次演示,该器件由集成在无源非光电主动衬底上的石墨烯片组成。
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