Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116232
M. Lipson
Ultrafast optoelectronics devices, critical for future telecommunication and data ultra high speed communications and data communications, have been limited in speed due to nature of the materials forming the devices. Only very few materials can be used today as substrates for high speed optoelectronics limiting the applicability of these devices and preventing their integration with other emerging platforms such as RF photonics and silicon photonics. I will discuss novel materials for integrated optics including SiC, SiN and 2D materials. In particular graphene offers the possibility to break the limitation of traditional photonic materials. Graphene has been shown theoretically to have very high electro-optic coefficient with ultra high speed. We show the first demonstration of graphene-based ultra high speed device (30GHz) consisting of a graphene sheet integrated on a passive non-electro-optically active substrate.
{"title":"Novel materials for next generation photonic devices","authors":"M. Lipson","doi":"10.1109/IPCON.2017.8116232","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116232","url":null,"abstract":"Ultrafast optoelectronics devices, critical for future telecommunication and data ultra high speed communications and data communications, have been limited in speed due to nature of the materials forming the devices. Only very few materials can be used today as substrates for high speed optoelectronics limiting the applicability of these devices and preventing their integration with other emerging platforms such as RF photonics and silicon photonics. I will discuss novel materials for integrated optics including SiC, SiN and 2D materials. In particular graphene offers the possibility to break the limitation of traditional photonic materials. Graphene has been shown theoretically to have very high electro-optic coefficient with ultra high speed. We show the first demonstration of graphene-based ultra high speed device (30GHz) consisting of a graphene sheet integrated on a passive non-electro-optically active substrate.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131122331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-25DOI: 10.1109/DRC.2016.7548436
Abhronil Sengupta, Akhilesh R. Jaiswal, K. Roy
True Random Number Generators (TRNGs) are becoming increasingly popular in cryptography and other security applications. However, conventional TRNG designs in hardware often result in significantly high area and power consumption [1] and hence recent research efforts have been directed to developing compact, low power and high throughput TRNGs based on emerging technologies like the Magnetic Tunnel Junction (MTJ “spin-dice”) [2]. The random number generation process usually takes place through the application of two current pulses, namely the “reset” pulse to orient the magnet to a known initial state and subsequently the “roll” pulse to switch the magnet with probability of 0.5. The stochastic switching nature of the MTJ arises from the inherent thermal noise present in the device. However, the quality of the random number generated is not sufficiently high due to variations in the magnitude of current required to switch the MTJ with 50% probability (arising from PVT variations). Hence expensive post-processing schemes are usually required [2]. In this work, we explore the design of a Voltage Controlled Spin-Dice (VC-SD) using the recently discovered phenomena of Voltage Controlled Magnetic Anisotropy (VCMA) in an MTJ structure to orient the ferromagnet along a meta-stable magnetization direction and subsequently utilizing thermal noise to produce random switching of the magnet to either one of the stable magnetization directions. In addition to power and reliability benefits, the proposed TRNG is able to provide better resiliency against PVT variations.
{"title":"True random number generation using voltage controlled spin-dice","authors":"Abhronil Sengupta, Akhilesh R. Jaiswal, K. Roy","doi":"10.1109/DRC.2016.7548436","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548436","url":null,"abstract":"True Random Number Generators (TRNGs) are becoming increasingly popular in cryptography and other security applications. However, conventional TRNG designs in hardware often result in significantly high area and power consumption [1] and hence recent research efforts have been directed to developing compact, low power and high throughput TRNGs based on emerging technologies like the Magnetic Tunnel Junction (MTJ “spin-dice”) [2]. The random number generation process usually takes place through the application of two current pulses, namely the “reset” pulse to orient the magnet to a known initial state and subsequently the “roll” pulse to switch the magnet with probability of 0.5. The stochastic switching nature of the MTJ arises from the inherent thermal noise present in the device. However, the quality of the random number generated is not sufficiently high due to variations in the magnitude of current required to switch the MTJ with 50% probability (arising from PVT variations). Hence expensive post-processing schemes are usually required [2]. In this work, we explore the design of a Voltage Controlled Spin-Dice (VC-SD) using the recently discovered phenomena of Voltage Controlled Magnetic Anisotropy (VCMA) in an MTJ structure to orient the ferromagnet along a meta-stable magnetization direction and subsequently utilizing thermal noise to produce random switching of the magnet to either one of the stable magnetization directions. In addition to power and reliability benefits, the proposed TRNG is able to provide better resiliency against PVT variations.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116491413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-25DOI: 10.1109/DRC.2016.7548421
M. Elahi, Avik W. Ghosh
Graphene's ultra-high carrier mobility (200,000cm2/Vs on hBN) [1] makes it promising for high speed applications; however the absence of a band-gap makes it hard to design logic elements out of graphene. It is possible to open a bandgap in graphene by applying strain [2] or by confining it in one direction into nanoribbons [3], but in the process bandstructure gets distorted near Dirac point and the carrier mobility decreases [4]. A recent set of papers have exploited instead the angle dependent transmission across graphene pn junctions (GPNJ) [5-9]. Since the opening angle is gate tunable, a sequence of angled junctions can turn off the electrons [10,11] using gateable momentum filtering in the absence of a band-gap (instead, the ideas use a transmission gap). In the absence of edge scattering, momentum filtering is predicted to give large ON, low OFF current and a steep subthreshold swing (SS). In this paper, we calculate the transfer (ID-VG) and output (ID-VD) characteristics of a GPNJ switch [11] and show current saturation using gate geometry alone.
{"title":"Current saturation and steep switching in graphene PN junctions using angle-dependent scattering","authors":"M. Elahi, Avik W. Ghosh","doi":"10.1109/DRC.2016.7548421","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548421","url":null,"abstract":"Graphene's ultra-high carrier mobility (200,000cm2/Vs on hBN) [1] makes it promising for high speed applications; however the absence of a band-gap makes it hard to design logic elements out of graphene. It is possible to open a bandgap in graphene by applying strain [2] or by confining it in one direction into nanoribbons [3], but in the process bandstructure gets distorted near Dirac point and the carrier mobility decreases [4]. A recent set of papers have exploited instead the angle dependent transmission across graphene pn junctions (GPNJ) [5-9]. Since the opening angle is gate tunable, a sequence of angled junctions can turn off the electrons [10,11] using gateable momentum filtering in the absence of a band-gap (instead, the ideas use a transmission gap). In the absence of edge scattering, momentum filtering is predicted to give large ON, low OFF current and a steep subthreshold swing (SS). In this paper, we calculate the transfer (ID-VG) and output (ID-VD) characteristics of a GPNJ switch [11] and show current saturation using gate geometry alone.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122876708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-25DOI: 10.1109/DRC.2016.7548513
C. Gmachl
Quantum Cascade (QC) lasers are a rapidly evolving mid-infrared and THz, semiconductor laser technology based on intersubband transitions in multiple coupled quantum wells. The lasers' strengths are their wavelength tailorability, high performance and fascinating design potential.
{"title":"Recent developments in mid-infrared quantum cascade lasers and applications","authors":"C. Gmachl","doi":"10.1109/DRC.2016.7548513","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548513","url":null,"abstract":"Quantum Cascade (QC) lasers are a rapidly evolving mid-infrared and THz, semiconductor laser technology based on intersubband transitions in multiple coupled quantum wells. The lasers' strengths are their wavelength tailorability, high performance and fascinating design potential.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123922632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-25DOI: 10.1109/DRC.2016.7548432
Zifan Tang, Hongxiang Zhang, Wenpeng Liu, X. Duan
This work highlights a new on-chip biomolecule trapping method. We systematically studied the device performance in liquid, and provide a hydrodynamic combined acoustic method to trap micro-and nano-scaled bioparticles.
{"title":"Trapping of biomolecules using bulk acoustic wave resonators","authors":"Zifan Tang, Hongxiang Zhang, Wenpeng Liu, X. Duan","doi":"10.1109/DRC.2016.7548432","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548432","url":null,"abstract":"This work highlights a new on-chip biomolecule trapping method. We systematically studied the device performance in liquid, and provide a hydrodynamic combined acoustic method to trap micro-and nano-scaled bioparticles.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"29 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133654448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-25DOI: 10.1109/DRC.2016.7548419
N. Moser, A. Crespo, S. Tetlak, A. Green, K. Chabak, G. Jessen
Recently, β-Ga2O3 FETs have been introduced [1]-[3] as potential devices for high power, switching, and RF applications with increased performance and more cost effective means of production when compared to GaN or SiC. Documented material properties leading to a Baliga [4] figure of merit nearly four times that of GaN [1], indicate potential for reduced specific on resistance at higher breakdown voltages if theoretical material characteristics can be exploited. To achieve projections, however, low thermal conductivity of ~13 W/mK [5] [6], less than a tenth of GaN or SiC [7], must be managed. We present electrical characterization for ß-Ga2O3 MOSFETs using both static and pulsed measurement systems. Our results show the extent of thermal effects and provide a basis for developing test protocols to effectively characterize the devices without inducing thermal effects or degradation.
{"title":"Investigation of thermal effects in β-Ga2O3 MOSFET using pulsed IV","authors":"N. Moser, A. Crespo, S. Tetlak, A. Green, K. Chabak, G. Jessen","doi":"10.1109/DRC.2016.7548419","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548419","url":null,"abstract":"Recently, β-Ga2O3 FETs have been introduced [1]-[3] as potential devices for high power, switching, and RF applications with increased performance and more cost effective means of production when compared to GaN or SiC. Documented material properties leading to a Baliga [4] figure of merit nearly four times that of GaN [1], indicate potential for reduced specific on resistance at higher breakdown voltages if theoretical material characteristics can be exploited. To achieve projections, however, low thermal conductivity of ~13 W/mK [5] [6], less than a tenth of GaN or SiC [7], must be managed. We present electrical characterization for ß-Ga2O3 MOSFETs using both static and pulsed measurement systems. Our results show the extent of thermal effects and provide a basis for developing test protocols to effectively characterize the devices without inducing thermal effects or degradation.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130883795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-25DOI: 10.1109/DRC.2016.7548427
N. C. Miller, J. Albrecht, M. Grupen
This article presents a computational framework which accurately simulates and characterizes a GaN HEMT power amplifier. The static I-V family is computed and compared to measurements to demonstrate the solver's accuracy, and the device simulation framework is verified by comparing the HB-FKT and T-FKT solvers. Load-pull simulations are used to optimize the amplifier performance by choosing an optimal load impedance. Finally, several figures of merit are presented with the optimal load.
{"title":"Large-signal RF GaN HEMT simulation using Fermi Kinetics Transport","authors":"N. C. Miller, J. Albrecht, M. Grupen","doi":"10.1109/DRC.2016.7548427","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548427","url":null,"abstract":"This article presents a computational framework which accurately simulates and characterizes a GaN HEMT power amplifier. The static I-V family is computed and compared to measurements to demonstrate the solver's accuracy, and the device simulation framework is verified by comparing the HB-FKT and T-FKT solvers. Load-pull simulations are used to optimize the amplifier performance by choosing an optimal load impedance. Finally, several figures of merit are presented with the optimal load.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127932830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-20DOI: 10.1109/DRC.2016.7548455
K. Morgan, J. Fan, R. Gowers, Liudi Jiang, C. H. De Groot
Resistive memory is an emerging non-volatile memory, with high density, low power and a simple structure [1]. The memories switch between high resistance state (HRS) and low resistance state (LRS). The physical mechanism is based upon a conductive filament forming and rupturing between two electrodes. In electrochemical metallization memory (ECM) this filament is made from cations, originating from an active electrode, e.g. Cu or Ag [2]. The counter electrode is normally an inert material such as Pt or W. Although much research has been conducted into resistive memory, the role of the filament reduction at the counter electrode in ECM memories is still not fully understood.
{"title":"Switching mechanisms of Cu/SiC resistive memories with W and Au counter electrodes","authors":"K. Morgan, J. Fan, R. Gowers, Liudi Jiang, C. H. De Groot","doi":"10.1109/DRC.2016.7548455","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548455","url":null,"abstract":"Resistive memory is an emerging non-volatile memory, with high density, low power and a simple structure [1]. The memories switch between high resistance state (HRS) and low resistance state (LRS). The physical mechanism is based upon a conductive filament forming and rupturing between two electrodes. In electrochemical metallization memory (ECM) this filament is made from cations, originating from an active electrode, e.g. Cu or Ag [2]. The counter electrode is normally an inert material such as Pt or W. Although much research has been conducted into resistive memory, the role of the filament reduction at the counter electrode in ECM memories is still not fully understood.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129607071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548458
Yaohua Tan, Avik W. Ghosh
Two dimensional(2D) materials such as graphene and transition metal dichalcogenides(TMDs) are exciting candidates for electronic and optoelectronic device applications. In particular, there is growing interest in stacked 2D materials that often arise naturally, and also provide added possibilities for desired functionalities with varying thickness and composition. It is essential to understand the electronic properties of stacked 2D materials such as twisted multilayer TMDs and TMD het-erostructures are sensitive to inter-layer interactions [3,4]. The translational symmetry of a twisted multilayer TMD is compromised due to the twist angle. Consequently a supercell much larger than the primitive unit cell needs to be considered, creating a spaghetti-like band structure from band folding. The challenge for theoretical studies of twisted multilayer systems is to extract inter-layer interactions from the folded band structures. In this work, band structures of twisted bilayer TMDs are studied using first principles calculations. In order to extract the band-edge splittings relavent to inter-layer interactions, we apply a band unfolding technique to the twisted bilayer TMDs. Multi-valley effective mass models are then created to model the bandedges at the Γ point as well as indirect conduction bands along K directions.
{"title":"First principles study of twisted bilayer MoS2 through band unfolding","authors":"Yaohua Tan, Avik W. Ghosh","doi":"10.1109/DRC.2016.7548458","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548458","url":null,"abstract":"Two dimensional(2D) materials such as graphene and transition metal dichalcogenides(TMDs) are exciting candidates for electronic and optoelectronic device applications. In particular, there is growing interest in stacked 2D materials that often arise naturally, and also provide added possibilities for desired functionalities with varying thickness and composition. It is essential to understand the electronic properties of stacked 2D materials such as twisted multilayer TMDs and TMD het-erostructures are sensitive to inter-layer interactions [3,4]. The translational symmetry of a twisted multilayer TMD is compromised due to the twist angle. Consequently a supercell much larger than the primitive unit cell needs to be considered, creating a spaghetti-like band structure from band folding. The challenge for theoretical studies of twisted multilayer systems is to extract inter-layer interactions from the folded band structures. In this work, band structures of twisted bilayer TMDs are studied using first principles calculations. In order to extract the band-edge splittings relavent to inter-layer interactions, we apply a band unfolding technique to the twisted bilayer TMDs. Multi-valley effective mass models are then created to model the bandedges at the Γ point as well as indirect conduction bands along K directions.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115452404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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