Iterative De-Embedding and Extracted Maximum Oscillation Frequency $f_{\text{MAX}}$ in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors

W. Quan, A. Arabhavi, R. Flueckiger, O. Ostinelli, C. Bolognesi
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引用次数: 3

Abstract

InP/GaAsSb DHBTs with varying emitter lengths $\pmb{L}_{\text{E}}$, emitter widths WE, and base metal widths $\pmb{W}_{\mathbf{B}}$ are characterized to determine their maximum oscillation cutoff frequency $f_{\text{MAX}}$ using iterative de-embedding in comparison to the standard OPEN-SHORT and SHORT-OPEN de-embedding schemes. With increasing measurement frequencies the OPEN-SHORT and SHORT-OPEN methods become increasingly subject to pathologies in the Mason Unilateral power gain which corrupt the extracted $f_{\mathbf{MAX}}$. In contrast, iterative de-embedding is free of such complications. In the present work, we characterize the $f_{\text{MAX}}$ extraction error introduced by the usual de-embedding techniques with respect to iterative de-embedding as a function of DHBT dimensions $\pmb{L}_{\mathbf{E}},\pmb{W}_{\mathbf{E}}$, and $\pmb{W}_{\mathbf{B}}$ to reveal that extracted $\pmb{f}_{\mathbf{MAX}}$ values are especially sensitive to the emitter width $\pmb{W}_{\mathbf{E}}$. De-embedding errors appear to carry over to extrinsic collector area which sensitively affects $f_{\text{MAX}}$.
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毫米波InP DHBTs的迭代去嵌入和最大振荡频率$f_{\text{MAX}}$提取:器件尺寸对提取误差的影响
对具有不同射极长度$\pmb{L}_{\text{E}}$、射极宽度WE和母材宽度$\pmb{W}_{\mathbf{B}}$的InP/GaAsSb dhbt进行了表征,与标准的OPEN-SHORT和SHORT-OPEN反嵌入方案相比,采用迭代反嵌入方法确定了其最大振荡截止频率$f_{\text{MAX}}$。随着测量频率的增加,OPEN-SHORT和SHORT-OPEN方法越来越容易受到Mason单边功率增益异常的影响,从而破坏提取的$f_{\mathbf{MAX}}$。相比之下,迭代去嵌入则没有这种复杂性。在本工作中,我们将通常的去嵌入技术在迭代去嵌入方面引入的$f_{\text{MAX}}$提取误差表征为DHBT维度$\pmb{L}_{\mathbf{E}}、$ pmb{W}_{\mathbf{E}}$和$\pmb{W}_{\mathbf{B}}$的函数,以揭示提取的$\pmb{f}_{\mathbf{MAX}}$值对发射器宽度$\pmb{W}_{\mathbf{E}}$特别敏感。反嵌入错误似乎会转移到外部收集器区域,该区域会敏感地影响$f_{\text{MAX}}$。
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