Adaptive threshold scheme to operate long on-chip buses at the limit of signal integrity

A. Katoch, Manish Garg, E. Seevinck, H. Veendrick
{"title":"Adaptive threshold scheme to operate long on-chip buses at the limit of signal integrity","authors":"A. Katoch, Manish Garg, E. Seevinck, H. Veendrick","doi":"10.1109/ESSCIR.2004.1356683","DOIUrl":null,"url":null,"abstract":"As the technology scales, on-chip interconnects are becoming more and more narrow while their height is not scaling linearly with their width. This leads to an increase in coupling capacitance with neighbouring wires, resulting in higher crosstalk. It also leads to poor performance due to a sluggish RC response at the receiving end of the wire, which may even result in failure in (very) noisy environments. We propose an adaptive threshold scheme in which the receiver switching thresholds are adjusted according to the detected noise in the bus lines. These noise levels are dependent on both the front-end processing (transistor performance) as well as on the backend processing (metal resistance, capacitance, width and spacing). The circuit technique presented in this paper therefore automatically compensates for the process variations. This technique offers a 29% decrease of the propagation delay for a 10 mm long bus in Metal 2 in a 0.13 /spl mu/m CMOS technology in low noise conditions. The total range of control spans 75% of the bus delay.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

As the technology scales, on-chip interconnects are becoming more and more narrow while their height is not scaling linearly with their width. This leads to an increase in coupling capacitance with neighbouring wires, resulting in higher crosstalk. It also leads to poor performance due to a sluggish RC response at the receiving end of the wire, which may even result in failure in (very) noisy environments. We propose an adaptive threshold scheme in which the receiver switching thresholds are adjusted according to the detected noise in the bus lines. These noise levels are dependent on both the front-end processing (transistor performance) as well as on the backend processing (metal resistance, capacitance, width and spacing). The circuit technique presented in this paper therefore automatically compensates for the process variations. This technique offers a 29% decrease of the propagation delay for a 10 mm long bus in Metal 2 in a 0.13 /spl mu/m CMOS technology in low noise conditions. The total range of control spans 75% of the bus delay.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
自适应阈值方案在信号完整性极限下运行长片上总线
随着技术的发展,片上互连变得越来越窄,而其高度并不是与宽度成线性比例的。这导致与邻近导线的耦合电容增加,从而导致更高的串扰。由于接收端的RC响应缓慢,它还导致性能不佳,这甚至可能导致(非常)嘈杂环境中的故障。提出了一种自适应阈值方案,该方案根据检测到的母线噪声调整接收开关阈值。这些噪声水平取决于前端处理(晶体管性能)以及后端处理(金属电阻、电容、宽度和间距)。因此,本文提出的电路技术可自动补偿工艺变化。该技术在低噪声条件下,采用0.13 /spl mu/m CMOS技术,可将金属2中10mm长的总线的传播延迟降低29%。控制的总范围跨越总线延迟的75%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Charge recycling sense amplifier based logic: securing low power security ICs against DPA [differential power analysis] 1.5 GHz OPAMP in 120nm digital CMOS Digital delay locked loop with open-loop digital duty cycle corrector for 1.2Gb/s/pin double data rate SDRAM A 14-V high speed driver in 5-V-only 0.35-/spl mu/m standard CMOS A low-swing single-ended L1 cache bus technique for sub-90nm technologies
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1