{"title":"High-efficiency broadband monolithic pseudomorphic HEMT amplifiers at Ka-band","authors":"H. Tserng, P. Saunier, Y. Kao","doi":"10.1109/MCS.1992.185995","DOIUrl":null,"url":null,"abstract":"The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
