{"title":"Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs","authors":"R. Webster, A. Anwar","doi":"10.1109/ISDRS.2003.1272053","DOIUrl":null,"url":null,"abstract":"In this paper, we presents the first measurement of minimum noise figure in AlGaAsSb/InGaAs/AlGaAsSb metamorphic quantum well HEMTs (MHEMTs). MHEMTs allow the development of InGaAs-based HEMTs on inexpensive GaAs substrates in contrast to the rather expensive InP-substrates. A measured low noise figure, F/sub min/ is a function of frequency at different gate biases. This provides an attractive alternative technology for the realization of low noise millimeter wave devices.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, we presents the first measurement of minimum noise figure in AlGaAsSb/InGaAs/AlGaAsSb metamorphic quantum well HEMTs (MHEMTs). MHEMTs allow the development of InGaAs-based HEMTs on inexpensive GaAs substrates in contrast to the rather expensive InP-substrates. A measured low noise figure, F/sub min/ is a function of frequency at different gate biases. This provides an attractive alternative technology for the realization of low noise millimeter wave devices.
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