{"title":"Stable-cw-operation of a Mqw Laser Emitting at 1.54 /spl mu/m on a Si Substrate at Room Temperature","authors":"M. Sugo, H. Mori, Y. Itoh, Y. Sakai, M. Tachikawa","doi":"10.1109/DRC.1991.664670","DOIUrl":null,"url":null,"abstract":"Summary form only given. The MQW laser exhibits no degradation during 500 h of CW operation. Employing a hybrid organometallic vapor-phase epitaxy/vapor-phase epitaxy method, high-quality InP films with a full width at half maximum for the X-ray rocking curve of 110 arcsec, a dislocation density of 10/sup 7/ cm/sup -2/, and low residual stress of 2*10/sup 8/ dyn/cm/sup 2/ were obtained. Results of a preliminary CW aging test at room temperature showed no operational degradation over 500 h with a constant output power of 2 mW per facet. This LD appears to be a promising light source candidate for application to OEICs (optoelectronic integrated circuits). >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Summary form only given. The MQW laser exhibits no degradation during 500 h of CW operation. Employing a hybrid organometallic vapor-phase epitaxy/vapor-phase epitaxy method, high-quality InP films with a full width at half maximum for the X-ray rocking curve of 110 arcsec, a dislocation density of 10/sup 7/ cm/sup -2/, and low residual stress of 2*10/sup 8/ dyn/cm/sup 2/ were obtained. Results of a preliminary CW aging test at room temperature showed no operational degradation over 500 h with a constant output power of 2 mW per facet. This LD appears to be a promising light source candidate for application to OEICs (optoelectronic integrated circuits). >
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