P.M. Smith, P. Chao, P. Ho, K. Duh, M. Kao, J. Ballingall, S. Allen, A. Tessmer
{"title":"Microwave InAlAs/InGaAs/InP HEMTs: status and applications","authors":"P.M. Smith, P. Chao, P. Ho, K. Duh, M. Kao, J. Ballingall, S. Allen, A. Tessmer","doi":"10.1109/ICIPRM.1990.202984","DOIUrl":null,"url":null,"abstract":"The development of HEMTs based on the InAlAs/InGaAs/InP materials system for high-frequency analog applications is reported. Devices with 0.15- mu m gatelengths have demonstrated extrinsic transconductance of 1500 mS/mm and extrapolated maximum frequency of oscillation f/sub max/ greater than 450 GHz. The noise figure is the lowest of any room-temperature receiver technology over the 5 to 100 GHz frequency range. Prospects for power amplification are excellent: power-added efficiency of 41% has already been demonstrated at 60 GHz. The integration of these devices into monolithic microwave integrated circuits (MMICs) is discussed.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
The development of HEMTs based on the InAlAs/InGaAs/InP materials system for high-frequency analog applications is reported. Devices with 0.15- mu m gatelengths have demonstrated extrinsic transconductance of 1500 mS/mm and extrapolated maximum frequency of oscillation f/sub max/ greater than 450 GHz. The noise figure is the lowest of any room-temperature receiver technology over the 5 to 100 GHz frequency range. Prospects for power amplification are excellent: power-added efficiency of 41% has already been demonstrated at 60 GHz. The integration of these devices into monolithic microwave integrated circuits (MMICs) is discussed.<>
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