{"title":"Heavy-ion device cross-section response in magnetic tunnel junctions for a radiation hardened 16Mb magnetoresistive random access memory (MRAM)","authors":"R. Katti","doi":"10.1109/NSREC.2017.8115455","DOIUrl":null,"url":null,"abstract":"Heavy-ion device effect cross-sections from irradiated MRAM Magnetic Tunnel Junctions are LET/atomic number, and not fluence, dominated, with distribution tails similar to thermally-accelerated resistance and magnetoresistance shifts that also depend physically on the tunnel barrier.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2017.8115455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Heavy-ion device effect cross-sections from irradiated MRAM Magnetic Tunnel Junctions are LET/atomic number, and not fluence, dominated, with distribution tails similar to thermally-accelerated resistance and magnetoresistance shifts that also depend physically on the tunnel barrier.
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