{"title":"Characteristics of polymer photodetectors using Ga-doped ZnO electrode modified by self-assembled monolayer treatment","authors":"Yi-Wei Liao, Yusuke Sato, H. Kajii, Y. Ohmori","doi":"10.1109/IMFEDK.2014.6867080","DOIUrl":null,"url":null,"abstract":"The characteristics of polymer photodetectors using Ga-doped ZnO (GZO) electrode modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. A polymer photodetector based on a blend of a donor, poly(3-hexylthiophene) (P3HT), and an acceptor, fullerene derivative [6-6]phenyl-C61-butyric acid methyl ester (PCBM) with GZO modified by 2,3,4,5,6-pentafluorobenzylphosphonic acid (FBPA) exhibits incident-photon-to-current conversion efficiency (IPCE) of approximately 55% at -2 V under green light irradiation (λ = 500 nm). The characteristics of the device with GZO modified by FBPA treatment are improved. For the P3HT:PCBM device with FBPA, the dark current decreases, which results in the improved photodetector detectivity.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"526 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The characteristics of polymer photodetectors using Ga-doped ZnO (GZO) electrode modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. A polymer photodetector based on a blend of a donor, poly(3-hexylthiophene) (P3HT), and an acceptor, fullerene derivative [6-6]phenyl-C61-butyric acid methyl ester (PCBM) with GZO modified by 2,3,4,5,6-pentafluorobenzylphosphonic acid (FBPA) exhibits incident-photon-to-current conversion efficiency (IPCE) of approximately 55% at -2 V under green light irradiation (λ = 500 nm). The characteristics of the device with GZO modified by FBPA treatment are improved. For the P3HT:PCBM device with FBPA, the dark current decreases, which results in the improved photodetector detectivity.
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