Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

Abstract

By removing the SiN gate spacers in n-channel FinFETs with Silicon-Carbon (SiC) Source and Drain (S/D) stressors, the mechanical stress equilibrium is perturbed. Higher tensile channel stress can be achieved, after the transistor structure attains mechanical equilibrium once again after spacer removal. This stress increase results in up to ~15 % further IDsat enhancement over strained SiC S/D FinFETs with spacers intact. Peak Gm is enhanced by ~33 %.