{"title":"Wideband characterization of body-accessed PD SOI MOSFETs with multiport measurements","authors":"D. Lederer, O. Rozeau, J. Raskin","doi":"10.1109/SOI.2005.1563535","DOIUrl":null,"url":null,"abstract":"In this work we present an original method based on 3-port RF measurements to accurately extract the body resistance (R/sub be/) in body-accessed PD SOI MOSFETs. This method can be used to assess the validity of compact models such as BSIMSOI. The RF body access also enabled a precise characterization of intrinsic and extrinsic body capacitances. A complete 3-port model was then derived and further validated on DT MOSFET measurements by connecting the body to the gate terminal.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563535","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
In this work we present an original method based on 3-port RF measurements to accurately extract the body resistance (R/sub be/) in body-accessed PD SOI MOSFETs. This method can be used to assess the validity of compact models such as BSIMSOI. The RF body access also enabled a precise characterization of intrinsic and extrinsic body capacitances. A complete 3-port model was then derived and further validated on DT MOSFET measurements by connecting the body to the gate terminal.
在这项工作中，我们提出了一种基于3端口射频测量的原始方法，以准确提取体接入PD SOI mosfet中的体电阻(R/sub /)。该方法可用于评价BSIMSOI等紧凑模型的有效性。射频体接入也能够精确表征内在和外在体电容。然后推导出一个完整的3端口模型，并通过将主体连接到栅极终端在DT MOSFET测量上进一步验证。
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