{"title":"Anomalous doping profile in heavily doped Ge","authors":"K. Hosawa, K. Matsumoto, K. Shibahara","doi":"10.1109/IWJT.2005.203875","DOIUrl":null,"url":null,"abstract":"In this paper, the As and Sb dopant profiles in Ge introduced by ion implantation was evaluated. Profiles for medium dose implantation without amorphizing did not have severe discrepancy between simulated profiles. High dose implantation gave rise to unexpected deep penetration of the dopant. This probably originates from oxidation of the surface amorphized layer.","PeriodicalId":307038,"journal":{"name":"Extended Abstracts of the Fifth International Workshop on Junction Technology","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Fifth International Workshop on Junction Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2005.203875","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the As and Sb dopant profiles in Ge introduced by ion implantation was evaluated. Profiles for medium dose implantation without amorphizing did not have severe discrepancy between simulated profiles. High dose implantation gave rise to unexpected deep penetration of the dopant. This probably originates from oxidation of the surface amorphized layer.
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