Integration of a new Through Silicon Via concept in a microelectronic pressure sensor

Y. Bergmann, J. Reinmuth, B. Will, M. Hain
{"title":"Integration of a new Through Silicon Via concept in a microelectronic pressure sensor","authors":"Y. Bergmann, J. Reinmuth, B. Will, M. Hain","doi":"10.1109/EUROSIME.2013.6529892","DOIUrl":null,"url":null,"abstract":"A novel Through Silicon Via approach developed by Bosch offers high integration density of MEMS with a great cost saving potential. In this paper a Si-TSV process for MEMS is presented. To assess the stress influence of the TSV process on the silicon substrate, the TSV process was integrated in a piezo-resistive pressure sensor as a Via-Last approach. Etching and deposition of multiple layers as well as grinding of a silicon wafer may cause thermal and mechanical stress, which may affect the sensor's operation and signal-processing. Electrical measurements were carried out to evaluate the stress-responsive sensor characteristics. Results show that the Si-TSV process presented does not cause any deterioration of the pressure sensor's characteristics.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2013.6529892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A novel Through Silicon Via approach developed by Bosch offers high integration density of MEMS with a great cost saving potential. In this paper a Si-TSV process for MEMS is presented. To assess the stress influence of the TSV process on the silicon substrate, the TSV process was integrated in a piezo-resistive pressure sensor as a Via-Last approach. Etching and deposition of multiple layers as well as grinding of a silicon wafer may cause thermal and mechanical stress, which may affect the sensor's operation and signal-processing. Electrical measurements were carried out to evaluate the stress-responsive sensor characteristics. Results show that the Si-TSV process presented does not cause any deterioration of the pressure sensor's characteristics.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
在微电子压力传感器中集成新的通硅孔概念
博世开发的一种新颖的Through Silicon Via方法提供了高集成密度的MEMS,具有很大的成本节约潜力。本文提出了一种用于MEMS的Si-TSV工艺。为了评估TSV工艺对硅衬底的应力影响,将TSV工艺作为Via-Last方法集成到压阻压力传感器中。多层硅片的蚀刻和沉积以及硅片的研磨可能会产生热应力和机械应力,这可能会影响传感器的工作和信号处理。进行了电测量来评估应力响应传感器的特性。结果表明,所提出的Si-TSV工艺不会导致压力传感器的性能恶化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Modeling of mixed-mode delamination by cohesive zone method Resistance electric filed dependence simulation of piezoresistive silicon pressure sensor and improvement by shield layer Reliability investigation of system in package devices toward aeronautic requirements: Methodology and application Adhesion of printed circuit boards with bending and the effect of reflow cycles Bonding wire life prediction model of the power module under power cycling test
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1