Systematic Search for Stabilizing Dopants in ZrO2 and HfO2 Using First-Principles Calculations

Y. Harashima, Hiroaki Koga, Z. Ni, Takehiro Yonehara, Michio Katouda, A. Notake, H. Matsui, T. Moriya, M. K. Si, R. Hasunuma, A. Uedono, Y. Shigeta
{"title":"Systematic Search for Stabilizing Dopants in ZrO2 and HfO2 Using First-Principles Calculations","authors":"Y. Harashima, Hiroaki Koga, Z. Ni, Takehiro Yonehara, Michio Katouda, A. Notake, H. Matsui, T. Moriya, M. K. Si, R. Hasunuma, A. Uedono, Y. Shigeta","doi":"10.1109/ISSM55802.2022.10027044","DOIUrl":null,"url":null,"abstract":"In this study, we performed systematic search for dopants to stabilize the tetragonal structure of HfO2 and ZrO2 by using first-principles calculations. Whole impurity configurations within the supercell, more than 12,000 systems, are examined and the most stable configurations are assumed to be realized. We reveal the contributions of the dopants to the structural stability of tetragonal phase, and that Si or Ge significantly stabilize the tetragonal phase.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM55802.2022.10027044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this study, we performed systematic search for dopants to stabilize the tetragonal structure of HfO2 and ZrO2 by using first-principles calculations. Whole impurity configurations within the supercell, more than 12,000 systems, are examined and the most stable configurations are assumed to be realized. We reveal the contributions of the dopants to the structural stability of tetragonal phase, and that Si or Ge significantly stabilize the tetragonal phase.
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用第一性原理计算系统地寻找ZrO2和HfO2中的稳定掺杂剂
在本研究中,我们通过第一性原理计算系统地寻找了稳定HfO2和ZrO2的四方结构的掺杂剂。研究了超级单体内超过12000个系统的整个杂质构型,并假设实现了最稳定的构型。我们揭示了掺杂剂对四方相结构稳定性的贡献,Si或Ge显著地稳定了四方相。
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