K. Makiyama, T. Takahashi, T. Suzuki, K. Sawada, T. Ohki, M. Nishi, N. Hara, M. Takikawa
{"title":"Improvement of circuit-speed of HEMTs IC by reducing the parasitic capacitance","authors":"K. Makiyama, T. Takahashi, T. Suzuki, K. Sawada, T. Ohki, M. Nishi, N. Hara, M. Takikawa","doi":"10.1109/IEDM.2003.1269384","DOIUrl":null,"url":null,"abstract":"We developed a novel process technology to removes the dielectric substance around gate electrodes to decrease parasitic capacitance. The process enabled us to increase the operating speed of the integrated circuit without causing any process damage. As a result, we achieved 90 GHz operation of a static T-FF circuit using InP-HEMT technology. This is the fastest T-FF, consisting of a FET, reported to date. We also showed the excellent potential of this technology for fabricating ultra-high speed ICs.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
We developed a novel process technology to removes the dielectric substance around gate electrodes to decrease parasitic capacitance. The process enabled us to increase the operating speed of the integrated circuit without causing any process damage. As a result, we achieved 90 GHz operation of a static T-FF circuit using InP-HEMT technology. This is the fastest T-FF, consisting of a FET, reported to date. We also showed the excellent potential of this technology for fabricating ultra-high speed ICs.
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