S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, M. Heyns
{"title":"Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD","authors":"S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, M. Heyns","doi":"10.1109/ISDRS.2003.1271981","DOIUrl":null,"url":null,"abstract":"In this paper, we study the growth properties of HfO/sub 2/ on Ge by MOCVD, using TDEAH and O/sub 2/ precursors and compare the results to similar layers deposited on silicon substrates. Analysis techniques include ellipsometry, Rutherford Backscattering Spectra (RBS), transmission electron microscopy (TEM),X-ray diffraction (XRD), and time of flight secondary ion mass spectroscopy (TOFSIMS).","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1271981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, we study the growth properties of HfO/sub 2/ on Ge by MOCVD, using TDEAH and O/sub 2/ precursors and compare the results to similar layers deposited on silicon substrates. Analysis techniques include ellipsometry, Rutherford Backscattering Spectra (RBS), transmission electron microscopy (TEM),X-ray diffraction (XRD), and time of flight secondary ion mass spectroscopy (TOFSIMS).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
