Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement

Abstract

In this paper, a Ka-band large-signal model in consideration of trap effect on non-linear capacitance was proposed. In this model, trap effect was modeled by using trap circuits including the diode, the resistance, and the capacitance. The trap circuit affects non-linear capacitance as well as drain current and transconductance. Moreover, to extract the model parameters in the trap circuit, transient s-parameters were measured. By using transient s-parameters measurement, trap effect on non-linear capacitance including trap time constant can be considered. As the result of verification of the model, the proposed model was in good agreement with the measured data of not only AM-AM but also AM-PM.