{"title":"Low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination","authors":"W. Kruppa, J. B. Boos, B. R. Bennett, B. Tinkham","doi":"10.1109/ISDRS.2003.1272057","DOIUrl":null,"url":null,"abstract":"Measurements of the low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination are reported in this paper. The primary focus in this paper is on devices in which a digital alloy superlattice of InAs/InSb was used to form an InAsSb channel. This appears to be related to the lower stress in this channel, which is matched to AlSb.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Measurements of the low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination are reported in this paper. The primary focus in this paper is on devices in which a digital alloy superlattice of InAs/InSb was used to form an InAsSb channel. This appears to be related to the lower stress in this channel, which is matched to AlSb.
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