Influence of parasitic memory effect on single-cell faults in SRAMs

14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems Pub Date : 2011-04-13 DOI:10.1109/DDECS.2011.5783071

S. Irobi, Z. Al-Ars, S. Hamdioui, M. Renovell

引用次数: 2

Abstract

Parasitic node capacitance and faulty node voltage of a defective node can induce serious parasitic effects on the electrical behavior of SRAMs. This paper evaluates the impact of parasitic memory effect on the detection of single-cell faults in SRAMs. It demonstrates that detection is significantly influenced by parasitic node components; something that is often not accounted for during memory testing. Finally, it shows the impact of parasitic node components on all possible opens in the SRAM memory cell array, using node voltages from GND to VDD.

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sram中寄生记忆效应对单细胞故障的影响

寄生节点电容和缺陷节点的故障节点电压会对sram的电学行为产生严重的寄生效应。本文评估了寄生记忆效应对sram中单细胞故障检测的影响。结果表明，寄生节点分量对检测结果有显著影响;在记忆测试中通常没有考虑到的东西。最后，它显示了寄生节点组件对SRAM存储单元阵列中所有可能打开的影响，使用从GND到VDD的节点电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems

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