Novel ultra-low power RF lateral BJT on SOI-CMOS compatible substrate for SoC applications

Abstract

This work presents an ultra-low power RF LBJT on SOI. The Johnson's product (f/sub /spl tau// /spl times/BV/sub CEO/) of the fabricated LBJTs ranges between 190-300 GHz-V. The f/sub max/ of the optimal device reaches 46 GHz at collector current density of only 0.15mA//spl mu/m/sup 2/. This LBJT is compatible with SOI-CMOS for SOI-BiCMOS integration, an ideal technology for RF and mixed-signal SoC.