A 19.5 GHz 28 nm CMOS Class-C VCO with Reduced 1/f Noise Upconversion

Alessandro Franceschin, P. Andreani, F. Padovan, M. Bassi, R. Nonis, A. Bevilacqua
{"title":"A 19.5 GHz 28 nm CMOS Class-C VCO with Reduced 1/f Noise Upconversion","authors":"Alessandro Franceschin, P. Andreani, F. Padovan, M. Bassi, R. Nonis, A. Bevilacqua","doi":"10.1109/ESSCIRC.2019.8902813","DOIUrl":null,"url":null,"abstract":"Class-C operation is leveraged to implement a K-band CMOS VCO where the upconversion of the 1/f noise from the core transistors is robustly contained at a minimal level. Implemented in a bulk 28 nm CMOS technology, the VCO shows a phase noise as low as -108.5 dBc/Hz at 1 MHz offset (-83 dBc/Hz at 100 kHz offset) from the 19.5 GHz carrier, while consuming 14.4 mW and featuring a 12% tuning range.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902813","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Class-C operation is leveraged to implement a K-band CMOS VCO where the upconversion of the 1/f noise from the core transistors is robustly contained at a minimal level. Implemented in a bulk 28 nm CMOS technology, the VCO shows a phase noise as low as -108.5 dBc/Hz at 1 MHz offset (-83 dBc/Hz at 100 kHz offset) from the 19.5 GHz carrier, while consuming 14.4 mW and featuring a 12% tuning range.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种具有降低1/f噪声上转换的19.5 GHz 28 nm CMOS c类压控振荡器
利用c类操作来实现k波段CMOS压控振荡器,其中来自核心晶体管的1/f噪声的上转换被稳健地包含在最低水平。VCO采用批量28纳米CMOS技术实现,在19.5 GHz载波上,在1 MHz偏移时相位噪声低至-108.5 dBc/Hz(在100 kHz偏移时为-83 dBc/Hz),功耗为14.4 mW,调谐范围为12%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 78 fs RMS Jitter Injection-Locked Clock Multiplier Using Transformer-Based Ultra-Low-Power VCO An Integrated Programmable High-Voltage Bipolar Pulser With Embedded Transmit/Receive Switch for Miniature Ultrasound Probes Machine Learning Based Prior-Knowledge-Free Calibration for Split Pipelined-SAR ADCs with Open-Loop Amplifiers Achieving 93.7-dB SFDR An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network A Bidirectional Brain Computer Interface with 64-Channel Recording, Resonant Stimulation and Artifact Suppression in Standard 65nm CMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1