{"title":"Best Structures for Deep Submicron (0.1-0.3/spl mu/m) Mos Devices","authors":"A. Tasch","doi":"10.1109/DRC.1991.664660","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![[1991] 49th Annual Device Research Conference Digest](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
