{"title":"Broadband 0.25 micron ion-implant MMIC low noise amplifiers on GaAs","authors":"J. Sanctuary, C. Woodin, J. Manning","doi":"10.1109/MCS.1992.185988","DOIUrl":null,"url":null,"abstract":"A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185988","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.<>
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