{"title":"Nondestructive thickness mapping of epitaxial InGaAsP/InP layers","authors":"B. Sartorius, M. Brandstattner","doi":"10.1109/ICIPRM.1990.203014","DOIUrl":null,"url":null,"abstract":"A new technique for fast and nondestructive thickness mapping based on optical absorption measurements is presented. An experimental setup in which unspecified losses are eliminated by a two-wavelength arrangement and precision and stability are improved is described. High resolution and speed are obtained. Results for InGaAsP/InP epitaxial layers demonstrate the capability to detect thickness variations in the 10-nm range. Buried layers inside heterostructures can be measured selectively.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A new technique for fast and nondestructive thickness mapping based on optical absorption measurements is presented. An experimental setup in which unspecified losses are eliminated by a two-wavelength arrangement and precision and stability are improved is described. High resolution and speed are obtained. Results for InGaAsP/InP epitaxial layers demonstrate the capability to detect thickness variations in the 10-nm range. Buried layers inside heterostructures can be measured selectively.<>
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