Experimental analog performance of pTFETs as a function of temperature

2012 IEEE International SOI Conference (SOI) Pub Date : 1900-01-01 DOI:10.1109/SOI.2012.6404383

P. Agopian, M. D. V. Martino, J. Martino, R. Rooyackers, D. Leonelli, C. Claeys

引用次数: 4

Abstract

This paper presents an experimental study of the pTFET analog performance as a function of the temperature. It was observed that the gm improves with the temperature while the gD degrades. The gD degradation was the predominant effect which causes an AV reduction with temperature increase. However, independent of the temperature, comparing the pTFET and the pFinFET with the similar structure and same bias conditions, the first one presents a better analog performance in the temperature studied. The pTFET shows to be a good option for analog applications.

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ptfet的实验模拟性能随温度的变化

本文对pTFET模拟性能随温度的变化进行了实验研究。结果表明，随着温度的升高，gD降解，而gm提高。gD的降解是主要作用，导致AV随温度升高而降低。然而，在不考虑温度的情况下，比较具有相似结构和相同偏置条件的pTFET和pFinFET，前者在研究温度下具有更好的模拟性能。pTFET显示为模拟应用的一个很好的选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 IEEE International SOI Conference (SOI)

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