A. Acosta, A. Barriga, M. Valencia-Barrero, M. J. Díaz, J. Huertas
{"title":"Modeling of real bistables in VHDL","authors":"A. Acosta, A. Barriga, M. Valencia-Barrero, M. J. Díaz, J. Huertas","doi":"10.1109/EURDAC.1993.410677","DOIUrl":null,"url":null,"abstract":"A complete VHDL model of bistables including their metastable operation is presented. An RS-NAND latch has been modeled as a basic structure, orienting its implementation towards its inclusion in a cell library. Two applications are included: a description of a more complex latch (D-type) and a description of a circuit containing three latches where metastable signals are propagated. Simulation results show that the presented model provides very realistic information about the device behavior, which until now had to be obtained through electric simulation.<<ETX>>","PeriodicalId":339176,"journal":{"name":"Proceedings of EURO-DAC 93 and EURO-VHDL 93- European Design Automation Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of EURO-DAC 93 and EURO-VHDL 93- European Design Automation Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EURDAC.1993.410677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A complete VHDL model of bistables including their metastable operation is presented. An RS-NAND latch has been modeled as a basic structure, orienting its implementation towards its inclusion in a cell library. Two applications are included: a description of a more complex latch (D-type) and a description of a circuit containing three latches where metastable signals are propagated. Simulation results show that the presented model provides very realistic information about the device behavior, which until now had to be obtained through electric simulation.<>