{"title":"SiC device technology for energy efficiency and high temperature operation","authors":"M. Ostling","doi":"10.1109/EDSSC.2013.6628179","DOIUrl":null,"url":null,"abstract":"This paper will give a brief overview of current state of the art device technology for SiC discrete devices and applications. The superior energy efficiency of SiC devices will be demonstrated and compared to its silicon counterparts.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper will give a brief overview of current state of the art device technology for SiC discrete devices and applications. The superior energy efficiency of SiC devices will be demonstrated and compared to its silicon counterparts.