Dislocations and defect structure around micro-indentations and Te precipitates in CdTe

Abstract

We investigated dislocation-related electronic states induced by dislocation motion in CdTe-based semiconductors. Dislocations cause various types of electronic defect states in the bandgap of semiconductors, namely, defects created by different types of dislocations, and those due to an impurity or native defect segregated around the dislocations. The aim of this work was to further clarify, on the basis of an analysis of the lattice deformation, whether these defects belong to either the Te or Cd sublattice and to formulate a model describing such defects.