Optimal Ni/Co thickness extraction and two step rapid thermal process of the nickel-silicide for nanoscale complementary metal oxide semiconductor (CMOS) application
J. Yun, Soon-Young Oh, H. Ji, Bin-Feng Huang, Y. Park, Seong-Hyung Park, Heui-Seung Lee, Dae-Byung Kim, Ui-Sik Kim, Han-Seob Cha, Sang Hu, Jeong‐gun Lee, H. Lee
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引用次数: 3
Abstract
NiSi is an attractive silicide material to be applied in the nanoscale CMOSFETs. However, degradation of NiSi film after the post-silicidation annealing is one of serious demerits of NiSi. Ni/Co bi-layer is known as one of the most stable silicide structure for the improvement of the thermal stability. The formed bi-layer consists of the upper protection layer (CoSi/sub x/) and the lower conduction layer (NiSi) and their roles are different from each other. In this study, optimization of Ni/Co ratio and process condition is investigated for the nanoscale CMOSFETs.
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