{"title":"Modeling Of Chemical Mechanical Polishing Process For Three-dimensional Simulation","authors":"Takahashi, Tokunaga, Kasuga, Suzuki","doi":"10.1109/VLSIT.1997.623677","DOIUrl":null,"url":null,"abstract":"A new model of chemical mechanical polishing (CMP) planarization is proposed. Machine time for actual calculation can be estimated less than U100 of Finite Element Method and the simulation is in excellent agreement with experimental results. This model provides a physical image of planarization for three-dimensional surface profile during CMP. Furthermore an optimized LSI chip layout or an appropriate processing condition can be estimated.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A new model of chemical mechanical polishing (CMP) planarization is proposed. Machine time for actual calculation can be estimated less than U100 of Finite Element Method and the simulation is in excellent agreement with experimental results. This model provides a physical image of planarization for three-dimensional surface profile during CMP. Furthermore an optimized LSI chip layout or an appropriate processing condition can be estimated.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
