C. Peng, Z. Lei, Zhangang Zhang, Yujuan He, Yun Huang, Y. En
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引用次数: 0
Abstract
A radiation hardening process of shallow trench isolation oxide is proposed for 130 nm PDSOI technology. The TID effect and high temperature annealing effect after irradiation are investigated for the PDSOI nMOSFET.
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