R. Ciocoveanu, R. Weigel, A. Hagelauer, V. Issakov
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引用次数: 3
Abstract
This paper presents a highly efficient 3-stage differential Class-B power amplifier (PA) for short range radar applications, realized in a 28nm bulk CMOS technology. Measurement results show a saturated output power $(\mathrm{P}_{sat})$ of 11.9dBm with a 20.7% power-added efficiency (PAE) at 60GHz. Moreover, the measurements show that for a frequency range from 57GHz to 64GHz, the Psat varies from 10.5dBm to 11.2dBm and the circuit draws 26mA from a 0.9V power supply. Furthermore, the fabricated chip has an area of 0.61mm x 0.31mm including the pads.
本文提出了一种高效的3级差分b类功率放大器(PA)，用于近距离雷达应用，采用28nm块体CMOS技术实现。测量结果表明，在60GHz时，饱和输出功率$(\ mathm {P}_{sat})$为11.9dBm，功率附加效率(PAE)为20.7%。此外，测量表明，在57GHz到64GHz的频率范围内，Psat在10.5dBm到11.2dBm之间变化，电路从0.9V电源中吸收26mA。此外，该芯片的面积为0.61mm x 0.31mm(包括焊盘)。
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