J. Wang, N. Kistler, J. Woo, C. Viswanathan, P. Vasudev
{"title":"Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFETs","authors":"J. Wang, N. Kistler, J. Woo, C. Viswanathan, P. Vasudev","doi":"10.1109/SOSSOI.1990.145723","DOIUrl":null,"url":null,"abstract":"The low-field effective mobility was studied for partially depleted and fully depleted silicon-on-insulator MOSFETs at temperatures from 300 K to 77 K. The transistors used in the study were fabricated on SIMOX wafers with a film thickness of 1800 AA and a buried oxide thickness of 3500 AA. The partially depleted device shows a greater improvement at low temperature. The mobility in both thin-film devices is essentially independent of inversion charge density, indicating a weak dependence on perpendicular electric field.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The low-field effective mobility was studied for partially depleted and fully depleted silicon-on-insulator MOSFETs at temperatures from 300 K to 77 K. The transistors used in the study were fabricated on SIMOX wafers with a film thickness of 1800 AA and a buried oxide thickness of 3500 AA. The partially depleted device shows a greater improvement at low temperature. The mobility in both thin-film devices is essentially independent of inversion charge density, indicating a weak dependence on perpendicular electric field.<>
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