{"title":"Study of photo-emission current impact on spectral characteristics of double barrier photo-receiving structure [NiSi-Si-TiSi/sub 2/]","authors":"Kh. Khudaverdyan, H. Harutyunyan","doi":"10.1109/MIEL.2002.1003206","DOIUrl":null,"url":null,"abstract":"The silicide-silicon-silicide type photoreceiving structures recrystallized by laser, currently studied differ efficiently from conventional photoreceivers in their multifunctional operation. In them, the photosensitivity can be controlled by the external voltage and the device can be used as a zero frequency gauge due to dependence of the photocurrent on the external voltage of the mark shift point. This work is the first to investigate the influence of the photoemission from the contact on the spectral characteristics of the afore-mentioned structures.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The silicide-silicon-silicide type photoreceiving structures recrystallized by laser, currently studied differ efficiently from conventional photoreceivers in their multifunctional operation. In them, the photosensitivity can be controlled by the external voltage and the device can be used as a zero frequency gauge due to dependence of the photocurrent on the external voltage of the mark shift point. This work is the first to investigate the influence of the photoemission from the contact on the spectral characteristics of the afore-mentioned structures.
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