Effect of dielectric constant and oxide thickness on the performance analysis of symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region
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引用次数: 3
Abstract
In this paper, the potential distribution for symmetric double gate stack-oxide junctionless field effect transistor (DGS-JLFET) in subthreshold region has been observed. Using the potential distribution, current vs voltage (Ids vs. Vgs) characteristic and various short channel effects such as on-off ratio (Ion/Ioff), subthreshold swing (SS), drain induced barrier lowering (DIBL), threshold voltage roll-off (TVRO) have been studied by changing device parameters. It has been observed that, if the dielectric constant of high-k oxide is increased and the thickness of stack-oxide is decreased, device shows better short channel effect (SCE) performance in the most of the cases.
本文观察了对称双栅无结场效应晶体管(DGS-JLFET)在亚阈值区域的电位分布。利用电势分布，研究了电流与电压(Ids vs. Vgs)特性和各种短通道效应，如通断比(Ion/Ioff)、亚阈值摆幅(SS)、漏极诱导势垒降低(DIBL)、阈值电压滚降(TVRO)等。结果表明，增大高k氧化物的介电常数，减小氧化物层厚度，在大多数情况下器件都能表现出较好的短通道效应(SCE)。
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