B. Kertis, G. Costakis, J. Jensen, J. Zeiter, J. Rickard, M. Pusztai, T. Bowman
{"title":"A 6.8 ns 1 Mb ECL I/O BiCMOS configurable SRAM","authors":"B. Kertis, G. Costakis, J. Jensen, J. Zeiter, J. Rickard, M. Pusztai, T. Bowman","doi":"10.1109/VLSIC.1990.111084","DOIUrl":null,"url":null,"abstract":"A 1-Mb ECL (emitter coupled logic) I/O SRAM which has been fabricated using 0.8-μm BiCMOS technology is described. The die is configurable to four different organizations (1 Mb×1, 1 Mb×1 with differential output, 512 K×2 with differential output, and 256 K×4) by way of bonding options. The device, with a die size of 240 mil×475 mil, has a typical access time of 6.8 ns and is 10 K or 100 K I/O compatible with a metal option","PeriodicalId":239990,"journal":{"name":"Digest of Technical Papers., 1990 Symposium on VLSI Circuits","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers., 1990 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1990.111084","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A 1-Mb ECL (emitter coupled logic) I/O SRAM which has been fabricated using 0.8-μm BiCMOS technology is described. The die is configurable to four different organizations (1 Mb×1, 1 Mb×1 with differential output, 512 K×2 with differential output, and 256 K×4) by way of bonding options. The device, with a die size of 240 mil×475 mil, has a typical access time of 6.8 ns and is 10 K or 100 K I/O compatible with a metal option
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