Recent progress in high performance InGaAsP optical amplifiers and multiple quantum well devices

W. Devlin, D. M. Cooper, P. C. Spurdens, G. Sherlock, M. Bagley, J. C. Regnault, D. Elton
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Abstract

Techniques for reducing the polarization sensitivity and suppressing the facet reflectivity of semiconductor optical amplifiers are reviewed. Results for 1.3- and 1.5- mu m amplifiers are discussed. The benefits of multiple-quantum-well (MQW) devices are demonstrated by enhanced tuning range external cavity devices and by high-saturated-output-power, fast-gain-recovery amplifiers.<>
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高性能InGaAsP光放大器及多量子阱器件研究进展
综述了降低半导体光放大器偏振灵敏度和抑制表面反射率的技术。讨论了1.3 μ m和1.5 μ m放大器的结果。多量子阱(MQW)器件的优势通过增强调谐范围的外腔器件和高饱和输出功率、快速增益恢复放大器得到了证明
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