Wideband high power SPDT and SP3T GaN MMIC switches in low-cost overmolded plastic package

Abstract

The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using on-chip spiral inductors and complementary logic control. Accurate linear and non-linear modeling of the switch FETs is integral to the circuit design process and is discussed in some detail.