{"title":"New concepts of SOI modelling for use in circuit simulator","authors":"J.T. Lin, K. G. Nichols, W. Redman-White","doi":"10.1109/SOI.1993.344576","DOIUrl":null,"url":null,"abstract":"In this paper some new concepts, which allow us to solve surface potentials for the two surfaces of the double gate controlled SOI device and to carry out general modelling of the device, are presented. Some simulation results from SPICE3e2 are also demonstrated.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper some new concepts, which allow us to solve surface potentials for the two surfaces of the double gate controlled SOI device and to carry out general modelling of the device, are presented. Some simulation results from SPICE3e2 are also demonstrated.<>
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