{"title":"Memory repair for high defect densities","authors":"M. Nicolaidis, P. Papavramidou","doi":"10.1109/VTS.2015.7116277","DOIUrl":null,"url":null,"abstract":"We illustrate that memory repair for high defect densities allows improving yield, extending circuit life, reducing power, and improving reliability, and can be used to push aggressively the limits of technology scaling. Then we present several developments enabling low-cost memory repair for high defect densities, which alllow realising this promise.","PeriodicalId":187545,"journal":{"name":"2015 IEEE 33rd VLSI Test Symposium (VTS)","volume":"47 23","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 33rd VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2015.7116277","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We illustrate that memory repair for high defect densities allows improving yield, extending circuit life, reducing power, and improving reliability, and can be used to push aggressively the limits of technology scaling. Then we present several developments enabling low-cost memory repair for high defect densities, which alllow realising this promise.
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