{"title":"Physical modeling of surface and heterojunction for mesa-structured HBTs","authors":"E. Kan, R. Dutton","doi":"10.1109/GAAS.1995.528987","DOIUrl":null,"url":null,"abstract":"Mesa-structured heterojunction bipolar transistors are analyzed by 2D device simulation, with emphasis on the treatment of exposed base surface and emitter-base heterojunction. Physical models for surface (surface recombination velocity and surface traps) and heterojunction (thermionic/diffusion and base dopant back diffusion) are compared to illustrate their effects on terminal characteristics. A strategy to assure accurate modeling is suggested.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"174 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Mesa-structured heterojunction bipolar transistors are analyzed by 2D device simulation, with emphasis on the treatment of exposed base surface and emitter-base heterojunction. Physical models for surface (surface recombination velocity and surface traps) and heterojunction (thermionic/diffusion and base dopant back diffusion) are compared to illustrate their effects on terminal characteristics. A strategy to assure accurate modeling is suggested.
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