A wide frequency band characterization technique for multiple-terminal discrete decoupling capacitors

H. Ng, Wui-Weng Wong
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引用次数: 2

Abstract

This paper describes an effective characterization method developed for frequency-dependent electrical characteristics of multiple-terminal chip capacitors used widely in power delivery networks in today's high-speed digital applications. This technique achieves excellent accuracy across a wide frequency range in the chip capacitor application on a digital ASIC substrate compared to conventional ESR and ESL extraction methods. To ensure the developed circuit models cover the wide frequency range, multiple branches of RLC elements are proposed to capture the higher-order frequency response of the chip capacitor impedance. The characterization procedure consists of carefully designed test fixtures, two-port VNA measurements, a de-embedding process, and circuit modeling and simulation. Simulation results demonstrated using this method is further correlated with a frequency limited de-embedded s-parameters from measurements.
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多端离散去耦电容器的宽频带表征技术
本文描述了一种有效的表征方法,用于在当今高速数字应用中广泛应用于输电网络的多端片式电容器的频率相关电特性。与传统的ESR和ESL提取方法相比,该技术在数字ASIC衬底上的芯片电容器应用中实现了宽频率范围内的优异精度。为了确保所开发的电路模型覆盖较宽的频率范围,提出了RLC元件的多个分支来捕获芯片电容阻抗的高阶频率响应。表征过程包括精心设计的测试夹具,双端口VNA测量,去嵌入过程,以及电路建模和仿真。仿真结果表明,使用该方法可以进一步与频率受限的去嵌入s参数相关联。
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