The enabling solution of Cu/low-k planarization technology

Y. Wada, I. Noji, I. Kobata, T. Kohama, A. Fukunaga, M. Tsujimura
{"title":"The enabling solution of Cu/low-k planarization technology","authors":"Y. Wada, I. Noji, I. Kobata, T. Kohama, A. Fukunaga, M. Tsujimura","doi":"10.1109/IITC.2005.1499951","DOIUrl":null,"url":null,"abstract":"The electro-chemical polishing in DI water (\"ECP-DI\" technology) and the advanced CMP technology (\"mC/sup 2/\") are introduced, as a new noble low down-force planarization technology. Each process is developed for the Cu bulk polishing step of Cu/ultra low-k devices. The ECP-DI is governed by Faraday's law, and that principle involves 'di-plating' of only the part coming into contact with the ion exchange film. Advanced CMP is a process which is not governed by Preston's law, but by the dissolution law.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The electro-chemical polishing in DI water ("ECP-DI" technology) and the advanced CMP technology ("mC/sup 2/") are introduced, as a new noble low down-force planarization technology. Each process is developed for the Cu bulk polishing step of Cu/ultra low-k devices. The ECP-DI is governed by Faraday's law, and that principle involves 'di-plating' of only the part coming into contact with the ion exchange film. Advanced CMP is a process which is not governed by Preston's law, but by the dissolution law.
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铜/低钾平化技术的使能方案
介绍了一种新型的、高贵的、低下压力的平面化技术——DI水中电化学抛光(“ECP-DI”技术)和先进的CMP技术(“mC/sup 2/”)。针对铜/超低钾器件的铜体抛光步骤,开发了每一种工艺。ECP-DI受法拉第定律(Faraday’s law)的支配,该定律只对与离子交换膜接触的部分进行“电镀”。高级CMP是一个不受普雷斯顿定律支配的过程,而是受溶解定律支配的过程。
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