{"title":"Formation of atomically flat interface and effect of silicidation condition on Schottky contact characteristics in ErSi/sub 1.7//Si(100) system","authors":"Y. Tsuchiya, T. Irisawa, A. Yagishita, J. Koga","doi":"10.1109/IWJT.2005.203893","DOIUrl":null,"url":null,"abstract":"We have investigated the Schottky barrier height of ErSi/sub 1.7/ and suitable formation process to achieve the ideal interface. Atomically flat interface has been achieved by high-temperature (700/spl deg/C) furnace annealing, as well as oxide-block W-cap layer. Under this condition, Schottky barrier height value for electron of lower than 0.4 eV has been obtained. In addition, careful control of silicidation anneal is quite important to achieve ideal ErSi/sub 1.7//Si interface.","PeriodicalId":307038,"journal":{"name":"Extended Abstracts of the Fifth International Workshop on Junction Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Fifth International Workshop on Junction Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2005.203893","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have investigated the Schottky barrier height of ErSi/sub 1.7/ and suitable formation process to achieve the ideal interface. Atomically flat interface has been achieved by high-temperature (700/spl deg/C) furnace annealing, as well as oxide-block W-cap layer. Under this condition, Schottky barrier height value for electron of lower than 0.4 eV has been obtained. In addition, careful control of silicidation anneal is quite important to achieve ideal ErSi/sub 1.7//Si interface.
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